12 edition of Nonequilibrium Carrier Dynamics in Semiconductors found in the catalog.
Published
October 5, 2006
by Springer
.
Written in English
Edition Notes
| Contributions | Marco Saraniti (Editor), Umberto Ravaioli (Editor) |
| The Physical Object | |
|---|---|
| Format | Hardcover |
| Number of Pages | 372 |
| ID Numbers | |
| Open Library | OL9056698M |
| ISBN 10 | 3540365877 |
| ISBN 10 | 9783540365877 |
@article{osti_, title = {Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials}, author = {Kaindl, Robert A and Averitt, Richard D}, abstractNote = {Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in . title = "Ultrafast non-equilibrium carrier dynamics in semiconductor laser mode-locking", abstract = "The mode-locking dynamics of a vertical external-cavity surface-emitting laser with saturable absorber is analyzed using a microscopic many-body : I. Kilen, C. N. Böttge, Jorg Hader, Stephan W Koch, Jerome V Moloney.
The influence of non-equilibrium carrier dynamics on pulse propagation through inverted semiconductor gain media is investigated. For this purpose, a fully microscopic many-body model is coupled to a Maxwell solver, allowing for a self-consistent investigation of the light-matter-coupling and carrier dynamics, the optical response of the laser and absorber in the multiple-quantum-well Author: C. N. Böttge, Jorg Hader, I. Kilen, Stephan W Koch, Jerome V Moloney. Carrier cooling is of widespread interest in the field of semiconductor science. It is linked to carrier–carrier and carrier–phonon coupling and has profound implications for the photovoltaic performance of materials. Recent transient optical studies have shown that a high carrier density in lead-halide perovskites (LHPs) can reduce the cooling rate through a “phonon bottleneck Author: Thomas R. Hopper, Andrei Gorodetsky, Ahhyun Jeong, Franziska Krieg, Franziska Krieg, Maryna I. Bodna.
A new type of field effect transistor is developed and realized. It is based on ballistic transport of hot electrons in a short GaAs channel. The channel is restricted by two short period superlattices. The gate has a V-grove shape. The transconductance of this FET exceeds 1 Sm/: V. T. Trofimov, M. V. Valeiko, N. A. Volchkov, A. I. Toropov, K. S. Zhuravlev, E. V. Kiseleva, S. V. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into .
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"Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information : Hardcover.
Originally known as "Hot Carriers in Semiconductors," the 14th conference in the series covered a wide spectrum of traditional topics dealing with non-equilibrium phenomena, ranging from quantum transport to optical phenomena in mesoscopic and nano-scale structures. Particular attention was given this time to emerging areas of this rapidly evolving field, with many sessions covering terahertz devices, high field transport in nitride semiconductors.
"Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every 2 years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing.
Request PDF | On Jan 1,Marco Saraniti and others published Nonequilibrium Carrier Dynamics in Semiconductors | Find, read and cite all the research you need on ResearchGate. Ultra short, intense pulse-excitation experiments in passive semiconductors have shown that carrier-carrier Coulomb scattering and carrier-LO phonon scattering provide very efficient relaxation processes of nonequilibrium carriers in semiconductors.
In semiconductor lasers these relaxation processes have to compete with the stimulated recombination of carriers and the pump process due to Author: F. Jahnke, S. Koch, U. Mohideen, R. Slusher. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells.
Semiconductor disk lasers have been Nonequilibrium Carrier Dynamics in Semiconductors book to be ideal as wavelength-agile, high-brightness sources for producing high average power under various pulsed mode-locking scenarios. Systematic microscopic modeling reveals that ultrafast nonequilibrium kinetic hole burning in electron/hole carrier distributions dictates the outcome of femtosecond duration mode-locked pulse formation.
Nonequilibrium carrier-phonon coupling in a semiconductor quantum well. We discuss an approach proposed recently by us for the description of hot phonon dynamics in heterolayers. The nonequilibrium phonons are described as excitations localized near the carrier layer and a kinetic equation for these “phonon wavepacket” is obtained.
Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics.
In eight authoritative chapters illustrated by more than figures, this book spans a broad range of new techniques and advances. Nonequilibrium excess carrier in semiconductor W.K. Chen Electrophysics, NCTU 2 Ambipolar transport Excess electrons and excess holes do not move independently of each other.
They diffuse, drift, and recombine with same effective diffusion coefficient, drift mobility and lifetime. This phenomenon is called ambipolar Size: KB. Picosecond and more recently femtosecond spectroscopy has established as a powerful tool for the direct investigation of the dynamics of nonequilibrium charge carriers and phonons in semiconductors.
In this paper we will discuss some recent results of the effect of localization of electronic states on carrier : E. Göbel, J. Kuhl, R. Höger. This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots.
The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based by: In atomically thin transition metal dichalcogenide semiconductors, the Coulomb interaction is known to be much stronger than in quantum wells of conventional semiconductors like GaAs, as witnessed by the 50 times larger exciton binding by: Description of non-equilibrium charge carrier dynamics in semiconductors is important for the improvement of photovoltaic efficiency and the characterization of impurity content as well as for the understanding of the underlying physical phenomena.
The recombination properties of the charge carriers can be conveniently characterized using. This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based : Springer International Publishing.
Hot carrier steady state and transient transport in bulk semiconductors and heterostructures is analyzed here using a general balance equation formulation with nonequilibrium phonon occupation and an ambient magnetic field of arbitrary strength.
Nonequilibrium Carrier Dynamics in Transition Metal Dichalcogenide Semiconductors semiconductor systems on the basis of a material-realistic ab-initio description of the electronic band structure and Coulomb interaction in combination with a many-body theory of carrier dynamics.
The e ciency of carrier re-Cited by: Despite substantial research over the past 30 years on the ultrafast, nonequilibrium carrier relaxation dynamics in semiconductors, a comprehensive theoretical understanding of complex particle dynamics in low-dimensional nanostructured materials, which amplify the effects of external driving forces and suppress energy relaxation channels, is far from complete.
Nonequilibrium carrier dynamics in semiconductors and ultrasmall devices Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices M.
Koyama. "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing.
Nonlinear carrier dynamics, caused by low-temperature impact ionization avalanche of impurities in extrinsic semiconductors, and the emergence of intractable chaos are treated in detail.
The book explores impact ionization models, linear stability analysis, bifurcation theory, fractal dimensions, and various analytical methods in chaos theory.Semiconductors, which satisfy this condition, are also called extrinsic semiconductors.
The free carrier density increases at high temperatures for which the intrinsic density approaches the net doping density and decreases at low temperatures due to incomplete ionization of the dopants.
This article focuses on nonequilibrium carrier dynamics in these quantum dots, using the ability of recent developments in electrical and optical spectroscopy techniques.
All-electrical transconductance spectroscopy is introduced, where a two-dimensional electron gas serves as a fast and sensitive detector for the electron/hole dynamics and Cited by: 1.
